 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| HFH18N50S Nov 2009 BVDSS = 500 V HFH18N50S 500V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 52 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.220 (Typ.) @VGS=10V 100% Avalanche Tested RDS(on) typ = 0.220 ID = 19 A TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Current Drain Current Drain Current Gate-Source Voltage Drain-Source Voltage TC=25 unless otherwise specified Parameter - Continuous (TC = 25) - Continuous (TC = 100) - Pulsed (Note 1) Value 500 19 11.4 76 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/ Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25) - Derate above 25 945 19 23 4.5 239 1.92 -55 to +150 300 Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Resistance Characteristics Symbol RJC RCS RJA Junction-to-Case Case-to-Sink Junction-to-Ambient Parameter Typ. -0.24 -Max. 0.52 -40 /W Units SEMIHOW REV.A0,Nov 2009 HFH18N50S Electrical Characteristics TC=25 C Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 VGS = 10 V, ID = 9.5 A 2.0 --0.220 4.0 0.265 V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ID = 250 , Referenced to 25 VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125 VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 500 ------0.5 ------1 10 100 -100 V V/ BVDSS Breakdown Voltage Temperature /TJ Coefficient IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---2850 310 21 3700 400 27 Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 4,5) VDS = 250 V, ID = 19 A, RG = 25 -------- 55 165 95 90 52 12 16 120 340 200 190 68 --- nC nC nC VDS = 400V, ID = 19 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 19 A, VGS = 0 V IS = 19 A, VGS = 0 V diF/dt = 100 A/s (Note 4) --------500 5.4 19 76 1.4 --A V C Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=4.7mH, IAS=19A, VDD=50V, RG=25, Starting TJ =25C 3. ISD19A, di/dt200A/s, VDDBVDSS , Starting TJ =25 C 4. Pulse Test : Pulse Width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature SEMIHOW REV.A0,Nov 2009 HFH18N50S Typical Characteristics ID, Drain Current [A] ID, Drain Current [A] VDS, Drain-Source Voltage[V] VGS, Gate-Source Voltage[V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics 0.7 RDS(ON) [], Drain-Source On-Resistance 0.6 0.5 VGS = 10V 0.4 0.3 VGS = 20V 0.2 Note : TJ = 25 C o 0.1 0 10 20 30 40 50 60 70 ID, Drain Current [A] IDR, Reverse Drain Current [A] VSD, Source-Drain Voltage [V] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 5000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 4000 VGS, Gate-Source Voltage [V] 10 VDS = 100V VDS = 250V VDS = 400V Ciss Capacitances [pF] 8 3000 Coss 2000 * Note ; 1. VGS = 0 V 6 4 1000 2. f = 1 MHz Crss 2 Note : ID = 19A 0 -1 10 10 0 10 1 0 0 10 20 30 40 50 60 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics SEMIHOW REV.A0,Nov 2009 HFH18N50S Typical Characteristics (continued) 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.5 1.0 Note : 0.5 1. VGS = 10 V 2. ID = 9.5 A 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [oC] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature 20 10 2 Figure 8. On-Resistance Variation vs Temperature Operation in This Area is Limited by R DS(on) 10 s 100 s 16 ID, Drain Current [A] 10 1 ID, Drain Current [A] 3 1 ms 10 ms 100 ms DC 12 10 0 8 10 -1 * Notes : o 1. TC = 25 C 2. TJ = 150 C o 4 10 -2 3. Single Pulse 0 10 10 1 10 2 10 0 25 50 75 100 o 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 10 0 (t), Thermal Response D = 0 .5 -1 10 0 .2 0 .1 0 .0 5 0 .0 2 0 .0 1 * N o te s : 1 . Z J C ( t) = 0 . 5 2 o C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t) JC Z 10 -2 PDM s in g le p u ls e t1 -3 t2 10 0 10 -5 10 -4 10 10 -2 10 -1 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] Figure 11. Transient Thermal Response Curve SEMIHOW REV.A0,Nov 2009 HFH18N50S Fig 12. Gate Charge Test Circuit & Waveform 50K 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDD ( 0.5 rated VDS ) VDS 90% 10V DUT Vin 10% td(on) t on tr td(off) t off tf Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms VDS ID RG L VDD BVDSS IAS BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD ID (t) DUT VDD tp 10V VDS (t) Time SEMIHOW REV.A0,Nov 2009 HFH18N50S Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG Same Type as DUT VDD VGS * dv/dt controlled by RG * IS controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop SEMIHOW REV.A0,Nov 2009 HFH18N50S Package Dimension TO-3P 15.60.20 13.60.20 9.60.20 4.80.20 .2 3 0 .20 1.50.20 13.90.20 14.90.20 19.90.20 18.70.20 1.40.20 30.20 20.20 10.20 3.50.20 16.50.20 5.45typ 5.45typ 0.60.20 SEMIHOW REV.A0,Nov 2009 |
Price & Availability of HFH18N50S
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |